Electron Tunneling and Hopping Possibilites in RuO2 Thick Films
Author(s) -
N. C. Halder
Publication year - 1982
Publication title -
active and passive electronic components
Language(s) - English
Resource type - Journals
eISSN - 1026-7034
pISSN - 0882-7516
DOI - 10.1155/apec.11.21
Subject(s) - quantum tunnelling , condensed matter physics , materials science , electron , physics , quantum mechanics
It is proposed in this paper that the temperature coefficient of resistivity (TCR) in thick film resistors arises from (i) the usual particle-to-particle conduction, (ii) electron tunneling, and (iii) the phononassisted hopping. Equations for activation energies are derived for the temperature minimum of the resistance with and without hopping. New equations for TCR are suggested. Some extensive calculations of TCR and activation energy have been made for RuO2 thick film resistors, the results of which agree well with available experimental measurements.
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