A Simulative Approach to Electron Conduction in Thick‐Film Resistors | Zendy

Carlo Jacoboni | Zendy; M. Prudenziati | Zendy; A. Rizzi | Zendy

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A Simulative Approach to Electron Conduction in Thick‐Film Resistors

Author(s) -

Carlo Jacoboni,

M. Prudenziati,

A. Rizzi

Publication year - 1983

Publication title -

active and passive electronic components

Language(s) - English

Resource type - Journals

eISSN - 1026-7034

pISSN - 0882-7516

DOI - 10.1155/apec.10.103

Subject(s) - resistor , thermal conduction , electron , materials science , electrical engineering , optoelectronics , physics , composite material , engineering , nuclear physics , voltage

A simulative approach to the calculation of electrical transport in thick-film resistors is presented, in which electrons are considered to hop from and to metallic grains and localized states in the glass. For concentrations of metallic grains sufficiently low and of localized states sufficiently high, a maximum in conductivity as a function of temperature is obtained due to a balance between the tendency of temperature to favour hopping and to oppose an ordered response to an external force.

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