Open AccessImprovement and Reduction of Self-Heating Effect in AlGaN/GaN HEMT Devices
Author(s) -
Hui Chen,
Naiyun Tang,
Zhipeng Zuo
Publication year - 2022
Publication title -
journal of sensors
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.399
H-Index - 43
eISSN - 1687-7268
pISSN - 1687-725X
DOI - 10.1155/2022/5378666
Subject(s) - materials science , optoelectronics , high electron mobility transistor , passivation , transistor , gallium nitride , junction temperature , substrate (aquarium) , power semiconductor device , reliability (semiconductor) , layer (electronics) , engineering physics , electrical engineering , power (physics) , voltage , nanotechnology , engineering , oceanography , physics , quantum mechanics , geology
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