Electric Field Controlled Itinerant Carrier Spin Polarization in Ferromagnetic Semiconductors
Author(s) -
Gezahegn Assefa
Publication year - 2021
Publication title -
advances in condensed matter physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.314
H-Index - 26
eISSN - 1687-8124
pISSN - 1687-8108
DOI - 10.1155/2021/6663876
Subject(s) - spintronics , condensed matter physics , electric field , spins , magnetism , ferromagnetism , spin polarization , polarization density , multiferroics , magnetic semiconductor , physics , semiconductor , polarization (electrochemistry) , magnetic field , spin (aerodynamics) , materials science , magnetization , optoelectronics , ferroelectricity , quantum mechanics , electron , chemistry , thermodynamics , dielectric
Electric field control of magnetic properties has been achieved across a number of different material systems. In diluted magnetic semiconductors (DMSs), ferromagnetic metals, multiferroics, etc., electrical manipulation of magnetism has been observed. Here, we study the effect of an electric field on the carrier spin polarization in DMSs ( GaAsMn ); in particular, emphasis is given to spin-dependent transport phenomena. In our system, the interaction between the carriers and the localized spins in the presence of electric field is taken as the main interaction. Our results show that the electric field plays a major role on the spin polarization of carriers in the system. This is important for spintronics application.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom