Characteristics of Metal–Semiconductor–Metal Ultraviolet Photodetectors Based on Pure ZnO/Amorphous IGZO Thin-Film Structures | Zendy

Kin-Tak Lam | Zendy; ShengJoue Young | Zendy; YenLin Chu | Zendy; Chi-Nan Tsai | Zendy; Tung-Te Chu | Zendy; Ting-Sung Lu | Zendy; LiangWen Ji | Zendy

Open Access

Characteristics of Metal–Semiconductor–Metal Ultraviolet Photodetectors Based on Pure ZnO/Amorphous IGZO Thin-Film Structures

Author(s) -

Kin-Tak Lam,

ShengJoue Young,

YenLin Chu,

Chi-Nan Tsai,

Tung-Te Chu,

Ting-Sung Lu,

LiangWen Ji

Publication year - 2021

Publication title -

journal of nanomaterials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.463

H-Index - 66

eISSN - 1687-4129

pISSN - 1687-4110

DOI - 10.1155/2021/6649200

Subject(s) - materials science , thin film , ultraviolet , amorphous solid , optoelectronics , sputtering , sputter deposition , photodetector , zinc , metal , semiconductor , nanotechnology , metallurgy , chemistry , organic chemistry

In this study, metal–semiconductor–metal-structured ultraviolet (UV) photodetectors (PDs) based on pure zinc oxide (ZnO) and amorphous indium gallium zinc oxide (a-IGZO) thin films were fabricated and characterized. The ZnO seed layers were deposited on Corning glass substrates via a radio frequency (RF) magnetron sputtering technique. Results showed that under a 5 V applied bias; the dark currents of the pure ZnO and a-IGZO thin films were 0.112 pA and 2.85 nA, respectively. Meanwhile, the UV-to-visible rejection ratio of the pure ZnO and a-IGZO thin films were 14.33 and 256, respectively. Lastly, the PDs of thea-IGZO thin films had a lower leakage current and higher rejection ratio than that of the pure ZnO thin films from the UV to visible light region.

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