Tuning Electronic Properties of GaSe/Silicane Van der Waals Heterostructure by External Electric Field and Strain: A First-Principle Study | Zendy

Gang Xu | Zendy; Lei Hao | Zendy

Open Access

Tuning Electronic Properties of GaSe/Silicane Van der Waals Heterostructure by External Electric Field and Strain: A First-Principle Study

Author(s) -

Gang Xu,

Lei Hao

Publication year - 2021

Publication title -

advances in condensed matter physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.314

H-Index - 26

eISSN - 1687-8124

pISSN - 1687-8108

DOI - 10.1155/2021/5514897

Subject(s) - heterojunction , van der waals force , electric field , semiconductor , materials science , band gap , condensed matter physics , direct and indirect band gaps , strain (injury) , optoelectronics , electronic band structure , range (aeronautics) , physics , quantum mechanics , molecule , medicine , composite material

The electronic structure of GaSe/silicane (GaSe/SiH) van der Waals (vdW) heterostructure in response to a vertical electric field and strain was studied via first-principle calculations. The heterostructure had indirect band gap characteristics in the range [−1.0, −0.4] V/Å and direct band gap features in the range [−0.3, 0.2] V/Å. Furthermore, a type-II to type-I band alignment transition appeared at −0.7 and −0.3 V/Å. Additionally, the GaSe/SiH vdW heterostructure had a type-II band alignment under strain, but an indirect to direct band gap semiconductor transition occurred at −3%. These results indicated that the GaSe/SiH vdW heterostructure may have applications in novel nanoelectronic and optoelectronic devices.

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