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In this work, a theoretical study of the electronic and the optical properties of a new family of strain-free GaAs/AlGaAs quantum dots (QDs) obtained by AlGaAs nanohole filling is presented. The considered model consists of solving the three-dimensional effective-mass Schrödinger equation, thus providing a complete description of the neutral and charged complex excitons’ fine structure. The QD size effect on carrier confinement energies, wave functions, and s-p splitting is studied. The direct Coulomb interaction impact on the calculated s and p states’ transition energies is investigated. The behaviour of the binding energy of neutral and charged excitons (X− and X+) and biexciton XX versus QD height is studied. The addition of the correlation effect allows to explain the nature of biexcitons often observed experimentally.

Theoretical Study of Excitonic Complexes in GaAs/AlGaAs Quantum Dots Grown by Filling of Nanoholes