Design and Optimization of 2.1 mW ULP Doherty Power Amplifier with Interstage Capacitances Using 65 nm CMOS Technology | Zendy

Muhammad Ovais Akhter | Zendy; Najam Muhammad Amin | Zendy

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Design and Optimization of 2.1 mW ULP Doherty Power Amplifier with Interstage Capacitances Using 65 nm CMOS Technology

Author(s) -

Muhammad Ovais Akhter,

Najam Muhammad Amin

Publication year - 2021

Publication title -

mathematical problems in engineering

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.262

H-Index - 62

eISSN - 1026-7077

pISSN - 1024-123X

DOI - 10.1155/2021/3364016

Subject(s) - amplifier , cmos , electrical engineering , power (physics) , triode , nmos logic , rf power amplifier , power gain , linearity , power added efficiency , engineering , subthreshold conduction , electronic engineering , transistor , capacitor , voltage , physics , quantum mechanics

This research proposed the design and calculations of ultra-low power (ULP) Doherty power amplifier (PA) using 65 nm CMOS technology. Both the main and the peaking amplifiers are designed and optimized using equivalent lumped parameters and power combiner models. The operation has been performed in RF-nMOS subthreshold or triode region to achieve ultra-low power (ULP) and to improve the linearity of the overall power amplifier (PA). The novel design consumes a DC power of 2.1 mW, power-added efficiency (PAE) of 29.8%, operating at 2.4 GHz band, and output referred 1 dB compression point at 4.1dBm. The simulation results show a very good capability of drive current, high gain, and very low input and output insertion losses.

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