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A compact, single-layer microstrip rectenna for dedicated far-field RF wireless power-harvesting applications is presented. The proposed rectenna circuit configurations including multiband triple L-Arms patch antenna with diamond slot ground are designed to resonate at 10, 13, 17, and 26 GHz with 10 dB impedance bandwidths of 0.67, 0.8, 2.45, and 4.3 GHz, respectively. Two rectifier designs have been fabricated and compared, a half wave rectifier with a shunted Schottky diode and a voltage doubler rectifier. The measured and simulated maximum conversion efficiencies of the rectifier using the shunted diode half-wave rectifier are 41%, and 34%, respectively, for 300 Ω load resistance, whereas they amount to 50% and 43%, respectively, for voltage doubler rectifier with 650 Ω load resistance. Compared to the shunted rectifier circuit, it is significant to note that the voltage doubler rectifier circuit has higher efficiency. Both rectifier’s circuits presented are tuned for a center frequency of 10 GHz and implemented using 0.81 mm thick Rogers (RO4003c) substrate. The overall size of the antenna is 16.5 × 16.5 mm2, and the shunted rectifier is only 13.3 × 8.2 mm2 and 19.7 × 7.4 mm2 for the voltage doubler rectifier. The antenna is designed and simulated using the CST Microwave Studio Suite (Computer Simulation Technology), while the complete rectenna is simulated using Agilent’s ADS tool with good agreement for both simulation and measurements.

Compact and High-Efficiency Rectenna for Wireless Power-Harvesting Applications