HIT Solar Cells with N-Type Low-Cost Metallurgical Si | Zendy

Xing Yang | Zendy; Jiangtao Bian | Zendy; Zhengxin Liu | Zendy; Shuai Li | Zendy; Chao Chen | Zendy; Song He | Zendy

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HIT Solar Cells with N-Type Low-Cost Metallurgical Si

Author(s) -

Xing Yang,

Jiangtao Bian,

Zhengxin Liu,

Shuai Li,

Chao Chen,

Song He

Publication year - 2018

Publication title -

advances in optoelectronics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.118

H-Index - 21

eISSN - 1687-5648

pISSN - 1687-563X

DOI - 10.1155/2018/7368175

Subject(s) - solar cell , wafer , impurity , materials science , heterojunction , silicon , metallurgy , optoelectronics , chemistry , organic chemistry

A conversion efficiency of 20.23% of heterojunction with intrinsic thin layer (HIT) solar cell on 156 mm × 156 mm metallurgical Si wafer has been obtained. Applying AFORS-HET software simulation, HIT solar cell with metallurgical Si was investigated with regard to impurity concentration, compensation level, and their impacts on cell performance. It is known that a small amount of impurity in metallurgical Si materials is not harmful to solar cell properties.

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