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Conductive Atomic Force Microscopy Study of the Resistive Switching in Yttria-Stabilized Zirconia Films with Au Nanoparticles
Author(s) -
Д. О. Филатов,
I. A. Kazantseva,
Д. А. Антонов,
И. Н. Антонов,
М. Е. Шенина,
Д. А. Павлов,
О. Н. Горшков
Publication year - 2018
Publication title -
scanning
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.359
H-Index - 47
eISSN - 1932-8745
pISSN - 0161-0457
DOI - 10.1155/2018/5489596
Subject(s) - conductive atomic force microscopy , materials science , yttria stabilized zirconia , electrical conductor , quantum tunnelling , cubic zirconia , nanotechnology , nanoparticle , hysteresis , resistive touchscreen , optoelectronics , atomic force microscopy , composite material , condensed matter physics , electrical engineering , ceramic , physics , engineering
We report on the investigation of the resistive switching (RS) in the ultrathin (≈5 nm in thickness) yttria-stabilized zirconia (YSZ) films with single layers of Au nanoparticles (NPs) by conductive atomic force microscopy (CAFM). Besides the butterfly-type hysteresis loops in the current-voltage ( I - V ) curves of the contact of the CAFM probe to the investigated film surface corresponding to the bipolar RS, the negative differential resistance (NDR) has been observed in the I - V curves of the AFM probe contact to the YSZ films with Au NPs in the conductive (“ON”) state. The NDR has been related to the resonant tunneling of electrons through the size-quantized energy states in the ultrafine (1 to 2 nm in diameter) Au NPs built in the conductive filaments in the YSZ films.

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