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Comparison of 6 Diode and 6 Transistor Mixers Based on Analysis and Measurement
Author(s) -
János Ladvánszky,
K. M. Osbáth
Publication year - 2016
Publication title -
advances in electrical engineering
Language(s) - English
Resource type - Journals
eISSN - 2356-6655
pISSN - 2314-7636
DOI - 10.1155/2016/8039679
Subject(s) - intermodulation , diplexer , transistor , electrical engineering , electronic mixer , diode , electronic engineering , frequency mixer , harmonic mixer , duplexer , integrated circuit , engineering , intermediate frequency , field effect transistor , radio frequency , cmos , voltage , amplifier , local oscillator , antenna (radio)
Our goal is to overview semiconductor mixers designed for good large signal performance. Twelve different mixers were compared utilizing pn diodes, bipolar transistors, and/or junction field effect transistors. The main aspect of comparison is the third-order intercept point (IP3), and both circuit analysis and measurement results have been considered. IP3 has been analyzed by the program AWR (NI AWR Design Environment) and measured by two-tone test (Keysight Technologies). We provide three ways of improvement of large signal performance: application of a diplexer at the RF port, reduction of DC currents, and exploiting a region of RF input power with infinite IP3. In addition to that, our contributions are several modifications of existing mixers and a new mixer circuit (as illustrated in the figures). It is widely believed that the slope of the third-order intermodulation product versus input power is always greater than that of the first-order product. However, measurement and analysis revealed (as illustrated in the figures) that the two lines may be parallel over a broad range of input power, thus resulting in infinite IP3. Mixer knowledge may be useful for a wide range of readers because almost every radio contains at least one mixer

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