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On Relation between Porosity of Epitaxial Layer and Quantity of Radiation Defects Generated during Radiation Processing in a Multilayer Structure
Author(s) -
E. L. Pankratov,
E. A. Bulaeva
Publication year - 2016
Publication title -
journal of nanoscience
Language(s) - English
Resource type - Journals
eISSN - 2356-749X
pISSN - 2314-6931
DOI - 10.1155/2016/3491790
Subject(s) - radiation , epitaxy , materials science , porosity , layer (electronics) , redistribution (election) , optoelectronics , composite material , optics , physics , politics , political science , law
We analyzed redistribution of radiation defects in a multilayer structure with porous epitaxial layer. The radiation defects were generated during radiation processing. It has been shown that porosity of epitaxial layer gives a possibility to decrease quantity of radiation defects

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