Influence of Substrate Material on Radiation Characteristics of THz Photoconductive Emitters
Author(s) -
Jens Klier,
G. Torosyan,
Nina S. Schreiner,
Daniel Molter,
Frank Ellrich,
Wissem Zouaghi,
E. Peytavit,
JeanFrançois Lampin,
R. Beigang,
Joachim Jonuscheit,
Georg von Freymann
Publication year - 2015
Publication title -
international journal of antennas and propagation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.282
H-Index - 37
eISSN - 1687-5877
pISSN - 1687-5869
DOI - 10.1155/2015/540175
Subject(s) - gallium arsenide , terahertz radiation , materials science , wafer , optoelectronics , substrate (aquarium) , antenna (radio) , photoconductivity , dipole antenna , radiation pattern , radiation , silicon , optics , electrical engineering , physics , oceanography , engineering , geology
We present in this paper spectral and spatial characteristics of terahertz emission from standard dipole antenna structures used as emitters depending on the substrate material. All antenna structures were lithographically fabricated on low-temperature (LT) grown, few-micrometers-thick gallium arsenide (GaAs) layers. To investigate the effect of the substrate material on the radiation pattern of terahertz beams, either semi-insulating gallium arsenide or high-resistivity silicon substrate wafers have been used. As detector a standard 40 mu m long dipole antenna on a semi-insulating GaAs substrate with a low-temperature grown gallium arsenide layer on it has been employed; this configuration allows for broadband detection and is still efficient enough for the characterization purpose. Strong dependence of the radiation pattern on the substrate used for the terahertz source is demonstrated. The measured patterns and differences between the two cases of substrates are well explained by means of classical diffraction
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