Dependence of the Photocurrent of a Schottky-Barrier Solar Cell on the Back Surface Recombination Velocity and Suggestion for a Structure with Improved Performance
Author(s) -
Avigyan Chatterjee,
Ashim Kumar Biswas,
Amitabha Sinha
Publication year - 2015
Publication title -
journal of solar energy
Language(s) - English
Resource type - Journals
eISSN - 2356-7635
pISSN - 2314-6230
DOI - 10.1155/2015/252916
Subject(s) - schottky barrier , photocurrent , solar cell , optoelectronics , schottky diode , materials science , recombination , silicon , plasmonic solar cell , fabrication , nanotechnology , chemistry , polymer solar cell , medicine , biochemistry , alternative medicine , pathology , diode , gene
Though Schottky-barrier solar cells have been studied extensively previously, not much work has been done recently on these cells, because of the fact that conventional p-n junction silicon solar cells have much higher efficiency and have attracted the attention of most of the researchers. However, the Schottky-barrier solar cells have the advantage of simple and economical fabrication process. In this paper, the effect of back surface recombination velocity on the minority carrier distribution and the spectral response of a Schottky-barrier silicon solar cell have been investigated and, based on this study, a new design of the cell with a back surface field has been suggested, which is expected to give much improved performance
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom