GaP Homojunction LEDs Fabricated by Dressed-Photon-Phonon-Assisted Annealing | Zendy

Jun Hyoung Kim | Zendy; Tadashi Kawazoe | Zendy; Motoichi Ohtsu | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

GaP Homojunction LEDs Fabricated by Dressed-Photon-Phonon-Assisted Annealing

Author(s) -

Jun Hyoung Kim,

Tadashi Kawazoe,

Motoichi Ohtsu

Publication year - 2015

Publication title -

advances in optical technologies

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.124

H-Index - 25

eISSN - 1687-6407

pISSN - 1687-6393

DOI - 10.1155/2015/236014

Subject(s) - homojunction , annealing (glass) , materials science , light emitting diode , band gap , optoelectronics , photon , phonon , photon energy , dopant , optics , doping , condensed matter physics , physics , composite material

By using a homojunction-structured GaP single crystal, we generated a photon energy higher than the bandgap energy (2.26 eV). The device was fabricated by performing dressed-photon-phonon- (DPP-) assisted annealing, while applying a forward-bias current, on a p-n homojunction structure formed by implanting a dopant (Zn) into an n-type GaP substrate. The DPP-assisted annealing increased the light emission intensity in an energy band above 2.32 eV by at least 550% compared with that before annealing

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research