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In-rich InAlN films were grown directly on Si (111) substrate by RF-MOMBE without any buffer layer. InAlN films were grown at various substrate temperatures in the range of 460–540°C with TMIn/TMAl ~3.3. Structural properties of InAlN ternary alloys were investigated with X-ray diffraction, scanning electron microscopy, and transmission electron microscopy (TEM). It is shown that the deposited In 0.8 AlM 0.2 N (0001) films can be in epitaxy with Si (111) substrate with orientation relationship of[    2   ̅   110]    I  n  A  l  N//[  1    1   ̅   0  ]    S  i. Also, the growth rate around ~0.25  μ m/h almost remains constant for growth in the temperature range from 460 to 520°C. Cross-sectional TEM from InAlN grown on Si (111) at 460°C shows that the epitaxial film is in direct contact with Si without any interlayer.

isrn nanomaterials

Effect of Growth Temperature on Structural Quality of In-Rich <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" id="M1"><mml:msub><mml:mrow><mml:mtext>In</mml:mtext></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mtext>Al</mml:mtext></mml:mrow><mml:mrow><mml:mi>1−x</mml:mi></mml:mrow></mml:msub><mml:mtext>N</mml:mtext></mml:math> Alloys on Si (111) Substrate by RF-MOMBE

Effect of Growth Temperature on Structural Quality of In-Rich InxAl1−xN Alloys on Si (111) Substrate by RF-MOMBE