Open AccessSynthesis and Characterization of LPCVD Polysilicon and Silicon Nitride Thin Films for MEMS Applications
Author(s) -
N. Sharma,
Manish Kumar Hooda,
Shivanjali Sharma
Publication year - 2014
Publication title -
journal of materials
Language(s) - English
Resource type - Journals
eISSN - 2314-4874
pISSN - 2314-4866
DOI - 10.1155/2014/954618
Subject(s) - materials science , residual stress , chemical vapor deposition , microelectromechanical systems , silicon nitride , annealing (glass) , thin film , polysilicon depletion effect , surface micromachining , composite material , deposition (geology) , optoelectronics , silicon , nanotechnology , fabrication , electrical engineering , medicine , paleontology , alternative medicine , engineering , transistor , pathology , voltage , sediment , biology , gate oxide
Inherent residual stresses during material deposition can have profound effects on the functionality and reliability of fabricated MEMS devices. Residual stress often causes device failure due to curling, buckling, or fracture. Typically, the material properties of thin films used in surface micromachining are not very well controlled during deposition. The residual stress, for example, tends to vary significantly for different deposition conditions; experiments were carried out to study the polysilicon and silicon nitride deposited by Low Pressure Chemical Vapor Deposition (LPCVD) method at wide range of process conditions. High temperature annealing effects on stress in case polysilicon are also reported. The reduced residual stress levels can significantly improve device performance, reliability, and yield as MEMS devices become smaller
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