Hydrogenated Silicon Carbide Thin Films Prepared with High Deposition Rate by Hot Wire Chemical Vapor Deposition Method | Zendy

M.M. Kamble | Zendy; V. S. Waman | Zendy; Azam Mayabadi | Zendy; Sanjay S. Ghosh | Zendy; Bharat Gabhale | Zendy; Sachin R. Rondiya | Zendy; Avinash Rokade | Zendy; Shubhangi Khadtare | Zendy; Vasant Sathe | Zendy; T. Shripathi | Zendy; Habib M. Pathan | Zendy; Suresh Gosavi | Zendy; Sandesh Jadkar | Zendy

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Hydrogenated Silicon Carbide Thin Films Prepared with High Deposition Rate by Hot Wire Chemical Vapor Deposition Method

Author(s) -

M.M. Kamble,

V. S. Waman,

Azam Mayabadi,

Sanjay S. Ghosh,

Bharat Gabhale,

Sachin R. Rondiya,

Avinash Rokade,

Shubhangi Khadtare,

Vasant Sathe,

T. Shripathi,

Habib M. Pathan,

Suresh Gosavi,

Sandesh Jadkar

Publication year - 2014

Publication title -

journal of coatings

Language(s) - English

Resource type - Journals

eISSN - 2356-7236

pISSN - 2314-6508

DOI - 10.1155/2014/905903

Subject(s) - raman spectroscopy , materials science , analytical chemistry (journal) , x ray photoelectron spectroscopy , chemical vapor deposition , stoichiometry , deposition (geology) , carbide , silicon , thin film , band gap , silane , chemistry , nanotechnology , chemical engineering , metallurgy , composite material , organic chemistry , physics , paleontology , optoelectronics , sediment , optics , biology , engineering

Structural, optical, and electrical properties of hydrogenated silicon carbide (SiC:H) films, deposited from silane (SiH4) and methane (CH4) gas mixture by HW-CVD method, were investigated. Film properties are carefully and systematically studied as function of deposition pressure which is varied between 200 mTorr and 500 mTorr. The deposition rate is found to be reasonably high (9.4 nm/s

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