Defects Induced Room Temperature Ferromagnetism in ZnO Thin Films | Zendy

Xiao Zhang | Zendy; Wei Zhang | Zendy; Xinghua Zhang | Zendy; Xuewen Xu | Zendy; Fanbin Meng | Zendy; Chengchun Tang | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Defects Induced Room Temperature Ferromagnetism in ZnO Thin Films

Author(s) -

Xiao Zhang,

Wei Zhang,

Xinghua Zhang,

Xuewen Xu,

Fanbin Meng,

Chengchun Tang

Publication year - 2014

Publication title -

advances in condensed matter physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.314

H-Index - 26

eISSN - 1687-8124

pISSN - 1687-8108

DOI - 10.1155/2014/806327

Subject(s) - diamagnetism , materials science , ferromagnetism , thin film , oxygen , crystallite , x ray photoelectron spectroscopy , argon , partial pressure , sputtering , condensed matter physics , analytical chemistry (journal) , nanotechnology , nuclear magnetic resonance , metallurgy , atomic physics , magnetic field , chemistry , physics , organic chemistry , quantum mechanics , chromatography

Polycrystalline ZnO thin films are prepared by the co-sputtering method under different oxygen partial pressures. Films deposited in pure argon gas exhibit ferromagnetism, whereas other films deposited under different oxygen partial pressures are diamagnetism. XPS results show the presence of Zn interstitial and oxygen vacancy in all of samples. Further analysis indicates that Zn interstitial may play an important role in triggering magnetic order on the undoped ZnO thin films by inducing an alteration of electronic configuration

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research