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In this work ReNx films were prepared by reactive magnetron sputtering at room temperature and deposited on a silicon wafer. It was found that the diffractograms of the nitrogen-rich rhenium film are consistent with those produced by high-pressure high-temperature methods, under the assumption that the film is oriented on the substrate. Using density functional calculations it was found that the composition of this compound could be ReN3, instead of ReN2, as stated on  previous works. The ReN3 compound fits in the Ama2 (40) orthorhombic space group, and due to the existence of N3 anions between Re layers it should be categorized as an azide. The material is exceptionally brittle and inherently unstable under indentation testing

journal of materials

Synthesis of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" id="M1"><mml:mrow><mml:msub><mml:mrow><mml:mtext>ReN</mml:mtext></mml:mrow><mml:mrow><mml:mtext>3</mml:mtext></mml:mrow></mml:msub></mml:mrow></mml:math> Thin Films by Magnetron Sputtering

Synthesis of ReN3 Thin Films by Magnetron Sputtering