Fowler-Nordheim Tunneling Characterization on Poly1-Poly2 Capacitors for the Implementation of Analog Memories in CMOS 0.5 μmTechnology | Zendy

Enrique J. Tinajero-Perez | Zendy; Jesús E. Molinar-Solís | Zendy; Rodolfo García | Zendy; Pedro Rosales | Zendy; Jose M. Rocha-Perez | Zendy; Alejandro Dı́az-Sánchez | Zendy; Arturo MoralesAcevedo | Zendy

Open Access

Fowler-Nordheim Tunneling Characterization on Poly1-Poly2 Capacitors for the Implementation of Analog Memories in CMOS 0.5 μmTechnology

Author(s) -

Enrique J. Tinajero-Perez,

Jesús E. Molinar-Solís,

Rodolfo García,

Pedro Rosales,

Jose M. Rocha-Perez,

Alejandro Dı́az-Sánchez,

Arturo MoralesAcevedo

Publication year - 2014

Publication title -

advances in condensed matter physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.314

H-Index - 26

eISSN - 1687-8124

pISSN - 1687-8108

DOI - 10.1155/2014/632785

Subject(s) - characterization (materials science) , cmos , capacitor , quantum tunnelling , materials science , nanotechnology , non volatile memory , electrical engineering , optoelectronics , voltage , engineering

The experimental results of the Fowler-Nordheim characterization using poly1-poly2 capacitors on CMOS ON Semi 0.5 μm technology are presented. This characterization allows the development, design, and characterization of a new current-mode analog nonvolatile memory. Experimental results of the memory cell architecture are presented and demonstrate the usefulness of the proposed architecture

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