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Appraisal on Textured Grain Growth and Photoconductivity of ZnO Thin Film SILAR
Author(s) -
Deepu Thomas,
Sunil C. Vattappalam,
Sunny Mathew,
Simon Augustine
Publication year - 2014
Publication title -
advances in chemistry
Language(s) - English
Resource type - Journals
eISSN - 2356-6612
pISSN - 2314-7571
DOI - 10.1155/2014/549019
Subject(s) - materials science , thin film , crystallinity , grain boundary , grain growth , photoconductivity , doping , scanning electron microscope , chemical engineering , texture (cosmology) , grain size , analytical chemistry (journal) , composite material , optoelectronics , nanotechnology , microstructure , chemistry , chromatography , engineering , image (mathematics) , artificial intelligence , computer science
ZnO thin films were prepared by successive ionic layer adsorption reaction (SILAR) method. The textured grain growth along c-axis in pure ZnO thin films and doped with Sn was studied. The structural analysis of the thin films was done by X-ray diffraction and surface morphology by scanning electron microscopy. Textured grain growth of the samples was measured by comparing the peak intensities. Textured grain growth and photo current in ZnO thin films were found to be enhanced by doping with Sn. ZnO thin film having good crystallinity with preferential (002) orientation is a semiconductor with photonic properties of potential benefit to biophotonics. From energy dispersive X-ray analysis, it is inferred that oxygen vacancy creation is responsible for the enhanced textured grain growth in ZnO thin films

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