Open AccessSynthesis and Characterization of Screen Printed Zn0.97Cu0.03O Thick Film for Semiconductor Device Applications
Author(s) -
Rayees Ahmad Zargar,
Sharief ud Din Khan,
Mohd. Shahid Khan,
Manju Arora,
Aurangzeb Khurram Hafiz
Publication year - 2014
Publication title -
physics research international
Language(s) - English
Resource type - Journals
eISSN - 2090-2239
pISSN - 2090-2220
DOI - 10.1155/2014/464809
Subject(s) - materials science , crystallite , band gap , electrical resistivity and conductivity , semiconductor , doping , analytical chemistry (journal) , screen printing , optoelectronics , composite material , metallurgy , chemistry , chromatography , electrical engineering , engineering
The studies on doped ZnO thick films deposited over large surface area are still a very promising area of research and development. We report characteristic properties of thick film of Zn0.97Cu0.03O prepared by the economic screen printing technique. The film was characterized by XRD, SEM, diffused reflectance, FTIR, and dark resistivity measurement techniques. The XRD and SEM studies revealed polycrystalline, single phase, porous, and granular surface morphology of this Cu doped ZnO thick films. The direct band gap energy of this film determined by diffuse reflectance technique is 3.18 eV. IR transmission spectrum measured in 4000–600 cm−1 region at ambient temperature confirmed the incorporation of Cu2
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom