Open AccessProton Irradiations on SJ HV Power MOSFETs to Realize Fast Diode Devices
Author(s) -
Ignazio Bertuglia,
Giuseppe Consentino,
M. Laudani
Publication year - 2014
Publication title -
advances in electrical engineering
Language(s) - English
Resource type - Journals
eISSN - 2356-6655
pISSN - 2314-7636
DOI - 10.1155/2014/423803
Subject(s) - materials science , diode , optoelectronics , mosfet , transistor , power mosfet , power semiconductor device , proton , power (physics) , electron , irradiation , voltage , electrical engineering , physics , nuclear physics , engineering , quantum mechanics
This paper studies the effects of proton irradiations on Super Junction High Voltage power MOSFETs to realize transistors with fast diode. Experiments were performed on a sample of 600 V power MOSFETs and achieved results were compared to standard irradiated devices by electrons
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom