Effects of Annealing on TiN Thin Film Growth by DC Magnetron Sputtering | Zendy

Jafari Azadeh | Zendy; Ghoranneviss Z. | Zendy; Elahi A. Salar | Zendy; Ghoranneviss M. | Zendy; Yazdi N. Fasihi | Zendy; Rezaei A. | Zendy

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Effects of Annealing on TiN Thin Film Growth by DC Magnetron Sputtering

Author(s) -

Jafari Azadeh,

Ghoranneviss Z.,

Elahi A. Salar,

Ghoranneviss M.,

Yazdi N. Fasihi,

Rezaei A.

Publication year - 2014

Publication title -

advances in mechanical engineering

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.318

H-Index - 40

ISSN - 1687-8132

DOI - 10.1155/2014/373847

Subject(s) - materials science , annealing (glass) , tin , titanium nitride , crystallite , sputter deposition , thin film , sputtering , crystallinity , metallurgy , cavity magnetron , scanning electron microscope , titanium , analytical chemistry (journal) , nitride , composite material , nanotechnology , layer (electronics) , chemistry , chromatography

We have reviewed the deposition of titanium nitride (TiN) thin films on stainless steel substrates by a DC magnetron sputtering method and annealing at different annealing temperatures of 500, 600, and 700°C for 120 min in nitrogen/argon atmospheres. Effects of annealing temperatures on the structural and the optical properties of TiN films were investigated using X-ray diffraction (XRD), atomic force microscope (AFM), field emission scanning electron microscopy (FESEM), and UV-VIS spectrophotometer. Our experimental studies reveal that the annealing temperature appreciably affected the structures, crystallite sizes, and reflection of the films. By increasing the annealing temperature to 700°C crystallinity and reflection of the film increase. These results suggest that annealed TiN films can be good candidate for tokamak first wall due to their structural and optical properties.

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