Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide | Zendy

FuChien Chiu | Zendy

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Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide

Author(s) -

FuChien Chiu

Publication year - 2013

Publication title -

advances in materials science and engineering

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.356

H-Index - 42

eISSN - 1687-8442

pISSN - 1687-8434

DOI - 10.1155/2013/950439

Subject(s) - materials science , hafnium , annealing (glass) , oxide , silicon , cross section (physics) , subthreshold conduction , diode , surface (topology) , optoelectronics , composite material , transistor , metallurgy , zirconium , electrical engineering , physics , geometry , mathematics , quantum mechanics , voltage , engineering

The interfacial properties between silicon and hafnium oxide (HfO2) are explored by the gated-diode method and the subthreshold measurement. The density of interface-trapped charges, the current induced by surface defect centers, the surface recombination velocity, and the surface state capture cross-section are obtained in this work. Among the interfacial properties, the surface state capture cross-section is approximately constant even if the postdeposition annealing condition is changed. This effective capture cross-section of surface states is about 2.4 × 10−15 cm2, which may be an inherent nature in the HfO2/Si interface

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