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The CuInSe2 absorber layers were deposited on Mo/glass substrates by using the spray coating method (SCM). At first, the CIS powder was ground into nanoscale particles; then the 6 wt% CIS particles were dispersed into isopropyl alcohol (IPA) to get the solution for SCM. 0.05 mL CIS solution was sprayed on the 2 cm × 1 cm Mo/glass substrates, and then the CIS solution films were annealed in a selenization furnace under different parameters. At first, the extra 0.2 g Se was put in the furnace, the selenization time was 5 min, and the selenization temperature was changed from 450°C to 600°C. After finding the better selenization temperature of 550°C and setting the selenization time at 5 min, the selenization process was set at 550°C and the extra Se content was changed from 0 g to 0.6 g. The influences of the selenization temperature and extra Se content on the surface and cross-section morphologies, crystallization, hall mobility, and carrier concentration and resistivity of the CIS absorber layers were well investigated in this study

Investigating the Properties of CIS Absorber Layer by Using the Spray Coating Method