Application of Electron Beam Melting to the Removal of Phosphorus from Silicon: Toward Production of Solar-Grade Silicon by Metallurgical Processes | Zendy

Hideaki Sasaki | Zendy; Yoshifumi Kobashi | Zendy; Takashi Nagai | Zendy; Masafumi Maeda | Zendy

Open Access

Application of Electron Beam Melting to the Removal of Phosphorus from Silicon: Toward Production of Solar-Grade Silicon by Metallurgical Processes

Author(s) -

Hideaki Sasaki,

Yoshifumi Kobashi,

Takashi Nagai,

Masafumi Maeda

Publication year - 2013

Publication title -

advances in materials science and engineering

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.356

H-Index - 42

eISSN - 1687-8442

pISSN - 1687-8434

DOI - 10.1155/2013/857196

Subject(s) - silicon , materials science , impurity , refining (metallurgy) , phosphorus , cathode ray , metallurgy , evaporation , melting temperature , electron , composite material , thermodynamics , chemistry , physics , organic chemistry , quantum mechanics

Removal methods of impurity from metallurgical-grade silicon (Si) are intensively studied to produce solar-grade silicon (SoG-Si) with a smaller economical load and lower cost. Removal of phosphorus (P) has been an important issue because of difficulties in application of conventional metallurgical methods such as solidification refining. Because P evaporates preferentially from molten Si due to its high vapor pressure, electron beam (EB) melting has been applied to the purification of Si. The evaporation of impurity P from Si is considered based on previous thermodynamic investigations here, and several research reports on EB melting of Si are reviewed

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