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Removal methods of impurity from metallurgical-grade silicon (Si) are intensively studied to produce solar-grade silicon (SoG-Si) with a smaller economical load and lower cost. Removal of phosphorus (P) has been an important issue because of difficulties in application of conventional metallurgical methods such as solidification refining. Because P evaporates preferentially from molten Si due to its high vapor pressure, electron beam (EB) melting has been applied to the purification of Si. The evaporation of impurity P from Si is considered based on previous thermodynamic investigations here, and several research reports on EB melting of Si are reviewed

Application of Electron Beam Melting to the Removal of Phosphorus from Silicon: Toward Production of Solar-Grade Silicon by Metallurgical Processes