Comparative Study of Gamma Radiation Effects on Solar Cells, Photodiodes, and Phototransistors
Author(s) -
Dejan Nikolić,
Koviljka Stanković,
Ljubinko Timotijević,
Zoran Rajović,
Miloš Vujisić
Publication year - 2013
Publication title -
international journal of photoenergy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.426
H-Index - 51
eISSN - 1687-529X
pISSN - 1110-662X
DOI - 10.1155/2013/843174
Subject(s) - photodiode , optoelectronics , irradiation , radiation , materials science , reliability (semiconductor) , annealing (glass) , gamma irradiation , optics , physics , power (physics) , quantum mechanics , nuclear physics , composite material
This paper presents the behavior of various optoelectronic devices after gamma irradiation. A number of PIN photodiodes, phototransistors, and solar panels have been exposed to gamma irradiation. Several types of photodiodes and phototransistors were used in the experiment. I-V characteristics (current dependance on voltage) of these devices have been measured before and after irradiation. The process of annealing has also been observed. A comparative analysis of measurement results has been performed in order to determine the reliability of optoelectronic devices in radiation environments
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