Raman and FTIR Studies on PECVD Grown Ammonia-Free Amorphous Silicon Nitride Thin Films for Solar Cell Applications | Zendy

Nafis Ahmed | Zendy; Chandra Bhal Singh | Zendy; Saurav Bhattacharya | Zendy; Sandip Dhara | Zendy; P. Balaji Bhargav | Zendy

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Raman and FTIR Studies on PECVD Grown Ammonia-Free Amorphous Silicon Nitride Thin Films for Solar Cell Applications

Author(s) -

Nafis Ahmed,

Chandra Bhal Singh,

Saurav Bhattacharya,

Sandip Dhara,

P. Balaji Bhargav

Publication year - 2013

Publication title -

conference papers in energy

Language(s) - English

Resource type - Journals

eISSN - 2314-582X

pISSN - 2314-4009

DOI - 10.1155/2013/837676

Subject(s) - plasma enhanced chemical vapor deposition , raman spectroscopy , silane , silicon nitride , fourier transform infrared spectroscopy , analytical chemistry (journal) , materials science , amorphous solid , thin film , amorphous silicon , nitride , silicon , chemical vapor deposition , volumetric flow rate , chemical engineering , chemistry , nanotechnology , crystalline silicon , optics , optoelectronics , crystallography , composite material , organic chemistry , layer (electronics) , physics , engineering , quantum mechanics

Ammonia- (NH3-) free, hydrogenated amorphous silicon nitride (a-SiNx:H) thin films have been deposited using silane (SiH4) and nitrogen (N2) as source gases by plasma-enhanced chemical vapour deposition (PECVD). During the experiment, SiH4 flow rate has been kept constant at 5 sccm, whereas N2 flow rate has been varied from 2000 to 1600 sccm. The effect of nitrogen flow on SiNx:H films has been verified using Raman analysis studies. Fourier transform Infrared spectroscopy analysis has been carried out to identify all the possible modes of vibrations such as Si–N, Si–H, and N–H present in the films, and the effect of nitrogen flow on these parameters is correlated. The refractive index of the above-mentioned films has been calculated using UV-VIS spectroscopy measurements by Swanepoel’s method.

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