Change of Electrophysical Properties of Nanocrystalline SiC Films by Laser Treatment at Applied Electric Field

Studied are peculiarities of the changes in the structure and electrophysical properties of nanocrystalline silicon carbide films of 3C-SiC polytype subjected to the action of picosecond laser pulses with λ = 355 nm and a pulse power up to 1.5 W. It is established that laser processing of the films with an energy density of 3 × 10−2−30 J/cm2 leads to ablation without decomposition of SiC. During the laser processing the electrical resistance of the films rises due to diminution of the film thickness. While measuring the PL properties of nc-SiC films under the influence of the applied electric field with intensity 3 × 103 V/cm, the effect of a single triple enhancement of the luminescence maximum is revealed. Repeated PL measurements at the same area of the film under the applied electric field with the intensity ranging from 0 to 1 × 104 V/cm show that the PL emission intensity diminishes at the short-wavelength boundary of the maximum and rises at the long-wavelength boundary. Thereat the spectral position of the PL maximum remains unchanged.