Room-Temperature Hysteresis in a Hole-Based Quantum Dot Memory Structure | Zendy

Tobias Nowozin | Zendy; Michael Narodovitch | Zendy; Leo Bonato | Zendy; D. Bimberg | Zendy; Mohammed N. Ajour | Zendy; Khaled Daqrouq | Zendy; Abdullah Balamash | Zendy

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Room-Temperature Hysteresis in a Hole-Based Quantum Dot Memory Structure

Author(s) -

Tobias Nowozin,

Michael Narodovitch,

Leo Bonato,

D. Bimberg,

Mohammed N. Ajour,

Khaled Daqrouq,

Abdullah Balamash

Publication year - 2013

Publication title -

journal of nanotechnology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.347

H-Index - 29

eISSN - 1687-9511

pISSN - 1687-9503

DOI - 10.1155/2013/797964

Subject(s) - quantum dot , materials science , optoelectronics , hysteresis , millisecond , transistor , modulation (music) , charge (physics) , field effect transistor , condensed matter physics , voltage , physics , quantum mechanics , acoustics

We demonstrate a memory effect in self-assembled InAs/Al0.9Ga0.1As quantum dots (QDs) near room temperature. The QD layer is embedded into a modulation-doped field-effect transistor (MODFET) which allows to charge and discharge the QDs and read out the logic state of the QDs. The hole storage times in the QDs decrease from seconds at 200 K down to milliseconds at room temperature

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