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Structural and Optical Properties of Aluminum Nitride Thin Films Deposited by Pulsed DC Magnetron Sputtering
Author(s) -
R. K. Choudhary,
Prabhash Mishra,
A. Biswas,
A.C. Bidaye
Publication year - 2013
Publication title -
isrn materials science
Language(s) - English
Resource type - Journals
eISSN - 2090-6099
pISSN - 2090-6080
DOI - 10.1155/2013/759462
Subject(s) - materials science , thin film , analytical chemistry (journal) , sputter deposition , pulsed dc , wurtzite crystal structure , ellipsometry , sputtering , substrate (aquarium) , nitride , metallurgy , composite material , layer (electronics) , nanotechnology , chemistry , zinc , oceanography , chromatography , geology
Aluminum nitride thin films were deposited on Si (100) substrate by pulsed DC (asymmetric bipolar) reactive magnetron sputtering under variable nitrogen flow in a gas mixture of argon and nitrogen. The deposited film was characterized by grazing incidence X-ray diffraction (GIXRD), atomic force microscope (AFM), spectroscopic ellipsometry, and secondary ion mass spectroscopy (SIMS). GIXRD results have shown (100) reflection of wurtzite AlN, whereas AFM micrographs have revealed very fine grained microstructure with average roughness in the range 6–8 nm. Spectroscopic ellipsometry measurements have indicated the band gap and refractive index of the film in the range 5.0–5.48 eV and 1.58–1.84, respectively. SIMS measurement has indicated the presence of oxygen in the film.

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