Synthesis of CIS Nanoink and Its Absorber Layer without Selenization | Zendy

Manoj Kumar | Zendy; Raghunandan Seelaboyina | Zendy; Kshitij Taneja | Zendy; Alekhya Venkata Madiraju | Zendy; Anup Kumar Keshri | Zendy; Sarang Mahajan | Zendy; K. Singh | Zendy

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Synthesis of CIS Nanoink and Its Absorber Layer without Selenization

Author(s) -

Manoj Kumar,

Raghunandan Seelaboyina,

Kshitij Taneja,

Alekhya Venkata Madiraju,

Anup Kumar Keshri,

Sarang Mahajan,

K. Singh

Publication year - 2013

Publication title -

conference papers in energy

Language(s) - English

Resource type - Journals

eISSN - 2314-582X

pISSN - 2314-4009

DOI - 10.1155/2013/739532

Subject(s) - thin film , materials science , crystallinity , chalcopyrite , dispersant , layer (electronics) , band gap , chemical engineering , absorption (acoustics) , stoichiometry , analytical chemistry (journal) , nanotechnology , composite material , optoelectronics , optics , metallurgy , copper , organic chemistry , dispersion (optics) , chemistry , physics , engineering

Highly crystalline CIS nanoink was synthesized using highly efficient microwave route. Thin films of CIS were fabricated using the developed ink by drop casting method. XRD pattern of CIS thin films indicates that a chalcopyrite phase with good crystallinity can be obtained using developed ink and that the composition of precursor ink can be transferred directly to the thin film without change in the stoichiometry. The developed ink alleviates the need of organic binders/dispersant and high temperature selenization using highly toxic H2Se gas (or Na2Se as a Se source) after deposition of thin film absorber layer. UV-VIS-NIR absorption analysis indicates that CIS thin film has a band gap of around 1.18 eV.

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