Low-Resistivity p-Type Doping in Wurtzite ZnS Using Codoping Method | Zendy

Dengfeng Li | Zendy; Min Luo | Zendy; Bo-Lin Li | Zendy; Cheng-Bing Wu | Zendy; Bo Deng | Zendy; Hui-Ning Dong | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Low-Resistivity p-Type Doping in Wurtzite ZnS Using Codoping Method

Author(s) -

Dengfeng Li,

Min Luo,

Bo-Lin Li,

Cheng-Bing Wu,

Bo Deng,

Hui-Ning Dong

Publication year - 2013

Publication title -

advances in condensed matter physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.314

H-Index - 26

eISSN - 1687-8124

pISSN - 1687-8108

DOI - 10.1155/2013/739078

Subject(s) - materials science , wurtzite crystal structure , algorithm , computer science , zinc , metallurgy

By using first principles calculations, we propose a codoping method of using acceptors and donors simultaneously to realize low-resistivity and high carrier concentration p-type ZnS with wurtzite structure. The ionization energy of single NS can be lowered by introducing the IIIZn-NS (III = Al, Ga, In) passivation system. Codoping method in ZnS (2N, III) has lower formation energy comparing with single doping of N since III elements act as reactive codopants

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research