Impact of the Gate Width of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT on Its Characteristics | Zendy

Liwei Jin | Zendy; Zhiqun Cheng | Zendy; Qingna Wang | Zendy

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Impact of the Gate Width of Al_0.27Ga_0.73N/AlN/Al_0.04Ga_0.96N/GaN HEMT on Its Characteristics

Author(s) -

Liwei Jin,

Zhiqun Cheng,

Qingna Wang

Publication year - 2013

Publication title -

international journal of antennas and propagation

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.282

H-Index - 37

eISSN - 1687-5877

pISSN - 1687-5869

DOI - 10.1155/2013/738659

Subject(s) - transconductance , high electron mobility transistor , materials science , threshold voltage , optoelectronics , oscillation (cell signaling) , transistor , substrate (aquarium) , voltage , heterojunction , electrical engineering , engineering , chemistry , biochemistry , oceanography , geology

This paper presents impact of layout sizes of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT heterostructure high-mobility transistors (HEMTs) on SiC substrate on its characteristics that include the threshold voltage, the maximum transconductance, characteristic frequency, and the maximum oscillation frequency. The changing parameters include the gate finger number, the gate width per finger. The measurement results based on common-source devices demonstrate that the above parameters have different effects on the threshold voltage, maximum transconductance, and frequency characteristics

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