H2O2Treatment of Electrochemically Deposited Cu2O Thin Films for Enhancing Optical Absorption | Zendy

Ying Song | Zendy; M. Ichimura | Zendy

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H₂O₂Treatment of Electrochemically Deposited Cu₂O Thin Films for Enhancing Optical Absorption

Author(s) -

Ying Song,

M. Ichimura

Publication year - 2013

Publication title -

international journal of photoenergy

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.426

H-Index - 51

eISSN - 1687-529X

pISSN - 1110-662X

DOI - 10.1155/2013/738063

Subject(s) - band gap , thin film , indium , analytical chemistry (journal) , materials science , indium tin oxide , oxide , aqueous solution , copper , absorption (acoustics) , oxygen , electrochemistry , deposition (geology) , nuclear chemistry , inorganic chemistry , chemistry , electrode , nanotechnology , metallurgy , optoelectronics , paleontology , organic chemistry , chromatography , sediment , composite material , biology

Cu2O is considered to be promising as an absorber layer material of solar cells, but its band gap (about 2.1 eV) is larger than the optimum one (about 1.5 eV). CuO has a smaller band gap of about 1.35 eV. Therefore, we attempted to oxidize Cu2O using H2O2 to increase oxygen ratio and decrease band gap. Cu2O thin films were deposited on indium-tin-oxide-coated glass from an aqueous solution containing CuSO4, lactic acid, and KOH by the galvanostatic electrochemical deposition at 40°C with current density of −1 mA/cm2. Then, the as-prepared copper oxide thin film was dipped in H2O2 (30%) at fixed temperature to oxidize for some time. By the H2O2 treatment at room temperature, the oxygen content was increased, and the band gap was decreased

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