Noise Performance of Heterojunction DDR MITATT Devices Based on at W-Band | Zendy

Suranjana Banerjee | Zendy; Aritra Acharyya | Zendy; J. P. Banerjee | Zendy

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Noise Performance of Heterojunction DDR MITATT Devices Based on at W-Band

Author(s) -

Suranjana Banerjee,

Aritra Acharyya,

J. P. Banerjee

Publication year - 2013

Publication title -

active and passive electronic components

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.144

H-Index - 22

eISSN - 1026-7034

pISSN - 0882-7516

DOI - 10.1155/2013/720191

Subject(s) - heterojunction , noise (video) , extremely high frequency , optoelectronics , quantum tunnelling , noise temperature , noise spectral density , spectral density , noise power , millimeter , materials science , measure (data warehouse) , power (physics) , noise figure , physics , optics , phase noise , telecommunications , computer science , quantum mechanics , database , artificial intelligence , image (mathematics) , amplifier , cmos

Noise performance of different structures of anisotype heterojunction double-drift region (DDR) mixed tunneling and avalanche transit time (MITATT) devices has been studied. The devices are designed for operation at millimeter-wave W-band frequencies. A simulation model has been developed to study the noise spectral density and noise measure of the device. Two different mole fractions and of Ge and corresponding four types of device structure are considered for the simulation. The results show that the -Si heterojunction DDR structure of MITATT device excels all other structures as regards noise spectral density ( sec) and noise measure (33.09 dB) as well as millimeter-wave properties such as DC-to-RF conversion efficiency (20.15%) and CW power output (773.29 mW)

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