Open AccessInfluence of Oxygen on Zinc Oxide Films Fabricated by Ion-Beam Sputter Deposition
Author(s) -
Jin–Cherng Hsu,
Yueh-Sheng Chiang
Publication year - 2013
Publication title -
isrn materials science
Language(s) - English
Resource type - Journals
eISSN - 2090-6099
pISSN - 2090-6080
DOI - 10.1155/2013/710798
Subject(s) - partial pressure , crystallite , materials science , amorphous solid , torr , oxygen , zinc , electrical resistivity and conductivity , sputtering , analytical chemistry (journal) , ion beam , sputter deposition , thin film , oxide , deposition (geology) , ion , metallurgy , chemistry , nanotechnology , crystallography , paleontology , physics , organic chemistry , chromatography , sediment , biology , electrical engineering , thermodynamics , engineering
In this study, zinc oxide films were deposited by an ion-beam sputter deposition in various oxygen partial pressures at room temperature. The films changed the structures from amorphous to polycrystalline with increasing the oxygen partial pressure (). The optimal was found at Torr because the film prepared at the oxygen partial pressure had the lowest resistivity and the highest transparence in the visible light region. The lowest resistivity results from a great number of oxygen vacancy sites formed on the polycrystalline surface as exposed to the atmosphere. Moreover, the film has the highest XRD peak intensity, smallest FWHM diffraction peak, smallest -spacing, and smallest biaxial stress.
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