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Surface-Assisted Luminescence: The PL Yellow Band and the EL of n-GaN Devices
Author(s) -
I. Izpura
Publication year - 2013
Publication title -
advances in condensed matter physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.314
H-Index - 26
eISSN - 1687-8124
pISSN - 1687-8108
DOI - 10.1155/2013/597265
Subject(s) - electroluminescence , photoluminescence , luminescence , materials science , surface (topology) , optoelectronics , engineering physics , condensed matter physics , nanotechnology , physics , geometry , mathematics , layer (electronics)
Although everybody should know that measurements are never performed directly on materials but on devices, this is not generally true. Devices are physical systems able to exchange energy and thus subject to the laws of physics, which determine the information they provide. Hence, we should not overlook device effects in measurements as we do by assuming naively that photoluminescence (PL) is bulk emission free from surface effects. By replacing this unjustified assumption with a proper model for GaN surface devices, their yellow band PL becomes surface-assisted luminescence that allows for the prediction of the weak electroluminescence recently observed in n-GaN devices when holes are brought to their surfaces

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