Damage Induced by Neutron Radiation on Output Characteristics of Solar Cells, Photodiodes, and Phototransistors | Zendy

Biljana Simić | Zendy; Dejan Nikolić | Zendy; Koviljka Stanković | Zendy; Ljubinko Timotijević | Zendy; Srboljub Stanković | Zendy

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Damage Induced by Neutron Radiation on Output Characteristics of Solar Cells, Photodiodes, and Phototransistors

Author(s) -

Biljana Simić,

Dejan Nikolić,

Koviljka Stanković,

Ljubinko Timotijević,

Srboljub Stanković

Publication year - 2013

Publication title -

international journal of photoenergy

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.426

H-Index - 51

eISSN - 1687-529X

pISSN - 1110-662X

DOI - 10.1155/2013/582819

Subject(s) - photodiode , materials science , neutron , analytical chemistry (journal) , algorithm , physics , optoelectronics , computer science , chemistry , nuclear physics , chromatography

This study investigates the effects of neutron radiation on I-V characteristics (current dependance on voltage) of commercial optoelectronic devices (silicon photodiodes, phototransistors, and solar panels). Current-voltage characteristics of the samples were measured at room temperature before and after irradiation. The diodes were irradiated using Am-Be neutron source with neutron emission of 2.7×106 n/s. The results showed a decrease in photocurrent for all samples which could be due to the existence of neutron-induced displacement defects introduced into the semiconductor lattice. The process of annealing has also been observed. A comparative analysis of measurement results has been performed in order to determine the reliability of optoelectronic devices in radiation environments

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