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The ZnS/CuInGaSe2 heterojunction solar cell fabricated on Mo coated glass is studied. The crystallinity of the CIGS absorber layer is prepared by coevaporated method and the ZnS buffer layer with a band gap of 3.21 eV. The MoS2 phase was also found in the CuInGaSe2/Mo system form HRTEM. The light soaking effect of photoactive film for 10 min results in an increase in F.F. from 55.8 to 64%, but series resistivity from 7.4 to 3.8 Ω. The efficiency of the devices improved from 8.12 to 9.50%

international journal of photoenergy

To Enhance Performance of Light Soaking Process on ZnS/<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" id="M1"><mml:msub><mml:mrow><mml:mtext>CuIn</mml:mtext></mml:mrow><mml:mrow><mml:mn mathvariant="normal">1</mml:mn><mml:mo>-</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mtext>Ga</mml:mtext></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mtext>Se</mml:mtext></mml:mrow><mml:mrow><mml:mn mathvariant="normal">2</mml:mn></…

To Enhance Performance of Light Soaking Process on ZnS/CuIn1-xGaxSe2