To Enhance Performance of Light Soaking Process on ZnS/CuIn1-xGaxSe2 | Zendy

YuJen Hsiao | Zendy; ChungHsin Lu | Zendy; TeHua Fang | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

To Enhance Performance of Light Soaking Process on ZnS/CuIn1-xGaxSe2

Author(s) -

YuJen Hsiao,

ChungHsin Lu,

TeHua Fang

Publication year - 2013

Publication title -

international journal of photoenergy

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.426

H-Index - 51

eISSN - 1687-529X

pISSN - 1110-662X

DOI - 10.1155/2013/561948

Subject(s) - crystallinity , materials science , high resolution transmission electron microscopy , algorithm , heterojunction , phase (matter) , analytical chemistry (journal) , computer science , physics , optoelectronics , nanotechnology , chemistry , composite material , chromatography , quantum mechanics , transmission electron microscopy

The ZnS/CuInGaSe2 heterojunction solar cell fabricated on Mo coated glass is studied. The crystallinity of the CIGS absorber layer is prepared by coevaporated method and the ZnS buffer layer with a band gap of 3.21 eV. The MoS2 phase was also found in the CuInGaSe2/Mo system form HRTEM. The light soaking effect of photoactive film for 10 min results in an increase in F.F. from 55.8 to 64%, but series resistivity from 7.4 to 3.8 Ω. The efficiency of the devices improved from 8.12 to 9.50%

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research