z-logo
open-access-imgOpen Access
Sputter Power Influenced Structural, Electrical, and Optical Behaviour of Nanocrystalline CuNiO2 Films Formed by RF Magnetron Sputtering
Author(s) -
Adem Sreedhar,
M. Reddy,
S. Uthanna,
J.F. Pierson
Publication year - 2013
Publication title -
isrn condensed matter physics
Language(s) - English
Resource type - Journals
eISSN - 2090-7400
pISSN - 2090-7397
DOI - 10.1155/2013/527341
Subject(s) - sputtering , nanocrystalline material , materials science , sputter deposition , analytical chemistry (journal) , band gap , electrical resistivity and conductivity , thin film , optoelectronics , chemistry , nanotechnology , engineering , chromatography , electrical engineering
Copper nickel oxide (CuNiO2) films were deposited on glass and silicon substrates using RF magnetron sputtering of equimolar Cu50Ni50 alloy target at different sputter powers in the range of 3.1–6.1 W/cm2. The effect of sputter power on the chemical composition, crystallographic structure, chemical binding configuration, surface morphology, and electrical and optical properties of CuNiO2 films was investigated. The films formed at sputter power of 5.1 W/cm2 were of nearly stoichiometric CuNiO2. Fourier transform infrared spectroscopic studies indicated the presence of the characteristic vibrational bands of copper nickel oxide. The nanocrystalline CuNiO2 films were formed with the increase in grain size from 75 to 120 nm as the sputter power increased from 3.1 to 5.1 W/cm2. The stoichiometric CuNiO2 films formed at sputter power of 5.1 W/cm2 exhibited electrical resistivity of 27 Ωcm, Hall mobility of 21 cm2/Vsec, and optical bandgap of 1.93 eV.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom