Open AccessImproved Efficiency of Flexible Organic Light-Emitting Diodes by Insertion of Ultrathin SiO2Buffer Layers
Author(s) -
Chien-Jung Huang,
Kan-Lin Chen,
Po-Wen Sze,
Wen-Ray Chen,
Teen-Hang Meen,
Shi-Lun Wu
Publication year - 2013
Publication title -
international journal of photoenergy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.426
H-Index - 51
eISSN - 1687-529X
pISSN - 1110-662X
DOI - 10.1155/2013/437304
Subject(s) - buffer (optical fiber) , materials science , indium tin oxide , layer (electronics) , optoelectronics , diode , oled , silicon , evaporation , luminous efficacy , nanotechnology , telecommunications , physics , computer science , thermodynamics
An ultrathin hole-injection buffer layer (HBL) using silicon dioxide (SiO2) by electron beam evaporation in flexible organic light-emitting diode (FOLED) has been fabricated. While the current of the device at constant driving voltage decreases as increasing SiO2 thickness. Compared to the different thicknesses of the buffer layer, the FOLED with the buffer layer of 4 nm showed the highest luminous efficiency. The atomic force microscopy (AFM) investigation of indium tin oxide (ITO)/SiO2 topography reveals changes at the interface between SiO2 and N,N′-bis-(1-naphthl)-diphenyl-1,1′-bipheny-4,4′-diamine (NPB), resulting in ultrathin SiO2 layers being a clear advantage for a FOLED. However, the SiO2 can be expected to be a good buffer layer material and thus enhance the emission performance of the FOLED
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