Wavelength Width Dependence of Cavity Temperature Distribution in Semiconductor Diode Laser | Zendy

S. P. Abbasi | Zendy; A. Alimorady | Zendy

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Wavelength Width Dependence of Cavity Temperature Distribution in Semiconductor Diode Laser

Author(s) -

S. P. Abbasi,

A. Alimorady

Publication year - 2013

Publication title -

isrn thermodynamics

Language(s) - English

Resource type - Journals

eISSN - 2090-5211

pISSN - 2090-5203

DOI - 10.1155/2013/424705

Subject(s) - laser , materials science , laser diode rate equations , diode , common emitter , optics , wavelength , distributed feedback laser , semiconductor laser theory , optoelectronics , injection seeder , vertical cavity surface emitting laser , bar (unit) , laser diode , laser power scaling , step recovery diode , physics , schottky diode , meteorology

The study of heat distribution in laser diode shows that there is nonuniform temperature distribution in cavity length of laser diode. In this paper, we investigate the temperature difference in laser diode cavity length and its effect on laser bar output wavelength width that mounted on usual CS model. In this survey at the first, laser was simulated then the simulations result was compared with experimental test result. The result shows that for each emitter there is difference, about 2.5 degree between the beginning and end of cavity.

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