Electrical Properties of Amorphous Titanium Oxide Thin Films for Bolometric Application | Zendy

Y. L. Ju | Zendy; Mahua Wang | Zendy; Yunlong Wang | Zendy; Shihu Wang | Zendy; Chengfang Fu | Zendy

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Electrical Properties of Amorphous Titanium Oxide Thin Films for Bolometric Application

Author(s) -

Y. L. Ju,

Mahua Wang,

Yunlong Wang,

Shihu Wang,

Chengfang Fu

Publication year - 2013

Publication title -

advances in condensed matter physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.314

H-Index - 26

eISSN - 1687-8124

pISSN - 1687-8108

DOI - 10.1155/2013/365475

Subject(s) - materials science , amorphous solid , analytical chemistry (journal) , bolometer , titanium , electrical resistivity and conductivity , physics , optics , chemistry , crystallography , organic chemistry , metallurgy , detector , quantum mechanics

We report the electrical conduction mechanism of amorphous titanium oxide thin films applied for bolometers. As the O/Ti ratio varies from 1.73 to 1.97 measured by rutherford backscattering spectroscopy, the resistivity of the films increases from 0.26 cm to 10.1 cm. At the same time, the temperature coefficient of resistivity and activation energy vary from −1.2% to −2.3% and from 0.09 eV to 0.18 eV, respectively. The temperature dependence of the electrical conductivity illustrates a thermally activated conduction behavior and the carrier transport mechanism in the titanium oxide thin films is found to obey the normal Meyer-Neldel Rule in the temperature range from 293 K to 373 K.

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