CMOS Ultra-Wideband Low Noise Amplifier Design | Zendy

Khalil Yousef | Zendy; H. Jia | Zendy; Ramesh K. Pokharel | Zendy; Ahmed Allam | Zendy; M. Ragab | Zendy; Haruichi Kanaya | Zendy; Keiji Yoshida | Zendy

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CMOS Ultra-Wideband Low Noise Amplifier Design

Author(s) -

Khalil Yousef,

H. Jia,

Ramesh K. Pokharel,

Ahmed Allam,

M. Ragab,

Haruichi Kanaya,

Keiji Yoshida

Publication year - 2013

Publication title -

international journal of microwave science and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.125

H-Index - 11

eISSN - 1687-5834

pISSN - 1687-5826

DOI - 10.1155/2013/328406

Subject(s) - low noise amplifier , cmos , ultra wideband , noise figure , wideband , bandwidth (computing) , electrical engineering , impedance matching , electronic engineering , amplifier , inductor , electrical impedance , engineering , computer science , telecommunications , voltage

This paper presents the design of ultra-wideband low noise amplifier (UWB LNA). The proposed UWB LNA whose bandwidth extends from 2.5 GHz to 16 GHz is designed using a symmetric 3D RF integrated inductor. This UWB LNA has a gain of 11 ± 1.0 dB and a NF less than 3.3 dB. Good input and output impedance matching and good isolation are achieved over the operating frequency band. The proposed UWB LNA is driven from a 1.8 V supply. The UWB LNA is designed and simulated in standard TSMC 0.18 µm CMOS technology process

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