Fabrication of Large-Grain Thick Polycrystalline Silicon Thin Films via Aluminum-Induced Crystallization for Application in Solar Cells | Zendy

Hsiao-Yeh Chu | Zendy; MinHang Weng | Zendy; Lin Chen | Zendy

Open Access

Fabrication of Large-Grain Thick Polycrystalline Silicon Thin Films via Aluminum-Induced Crystallization for Application in Solar Cells

Author(s) -

Hsiao-Yeh Chu,

MinHang Weng,

Lin Chen

Publication year - 2013

Publication title -

international journal of photoenergy

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.426

H-Index - 51

eISSN - 1687-529X

pISSN - 1110-662X

DOI - 10.1155/2013/245195

Subject(s) - materials science , crystallization , polycrystalline silicon , raman spectroscopy , amorphous silicon , annealing (glass) , silicon , fabrication , crystallite , amorphous solid , scanning electron microscope , thin film , grain size , solar cell , aluminium , chemical engineering , optoelectronics , layer (electronics) , composite material , nanotechnology , crystallography , crystalline silicon , optics , metallurgy , thin film transistor , chemistry , medicine , physics , alternative medicine , pathology , engineering

The fabrication of large-grain 1.25 μm thick polycrystalline silicon (poly-Si) films via two-stage aluminum-induced crystallization (AIC) for application in thin-film solar cells is reported. The induced 250 nm thick poly-Si film in the first stage is used as the seed layer for the crystallization of a 1 μm thick amorphous silicon (a-Si) film in the second stage. The annealing temperatures in the two stages are both 500°C. The effect of annealing time (15, 30, 60, and 120 minutes) in the second stage on the crystallization of a-Si film is investigated using X-ray diffraction (XRD), scanning electron microscopy, and Raman spectroscopy. XRD and Raman results confirm that the induced poly-Si films are induced by the proposed process

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