Open AccessLow Cost Amorphous Silicon Intrinsic Layer for Thin-Film Tandem Solar Cells
Author(s) -
Ching-In Wu,
ShoouJinn Chang,
Kin-Tak Lam,
Shuguang Li,
Sheng-Po Chang
Publication year - 2013
Publication title -
international journal of photoenergy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.426
H-Index - 51
eISSN - 1687-529X
pISSN - 1110-662X
DOI - 10.1155/2013/183626
Subject(s) - tandem , amorphous silicon , amorphous solid , silicon , substrate (aquarium) , materials science , layer (electronics) , saturation (graph theory) , deposition (geology) , solar cell , chemical engineering , optoelectronics , nanotechnology , crystalline silicon , composite material , chemistry , crystallography , geology , mathematics , paleontology , oceanography , combinatorics , sediment , engineering
The authors propose a methodology to improve both the deposition rate and SiH4 consumption during the deposition of the amorphous silicon intrinsic layer of the a-Si/μc-Si tandem solar cells prepared on Gen 5 glass substrate. It was found that the most important issue is to find out the saturation point of deposition rate which guarantees saturated utilization of the sourcing gas. It was also found that amorphous silicon intrinsic layers with the same k value will result in the same degradation of the fabricated modules. Furthermore, it was found that we could significantly reduce the production cost of the a-Si/μc-Si tandem solar cells prepared on Gen 5 glass substrate by fine-tuning the process parameters
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom